Datasheet > AP9960GH-HF

AP9960GH-HF

更新时间： 2024-09-15 19:46:39

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
4页	93K
描述
TRANSISTOR POWER, FET, FET General Purpose Power

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中文翻译

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技术参数
数据手册

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AP9960GH-HF 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.66	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

AP9960GH-HF 数据手册

AP9960GH/J-HF

Halogen-Free Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Simple Drive Requirement

BV_DSS

R_DS(ON)

I_D

40V

16mΩ

42A

▼ Low Gate Charge

▼ Fast Switching Characteristic

▼ RoHS Compliant & Halogen-Free

Description

Advanced Power MOSFETs from APEC provide the designer with the

best combination of fast switching, ruggedized device design, low on-

resistance and cost-effectiveness.

TO-252(H)

TO-251(J)

The TO-252 package is widely preferred for all commercial-industrial

surface mount applications and suited for low voltage applications such

as DC/DC converters. The through-hole version (AP9960GJ) are

available for low-profile applications.

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

+20

Continuous Drain Current, V_GS@ 10V

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current¹

195

P_D@T_C=25℃

Total Power Dissipation

Linear Derating Factor

0.36

W/℃

℃

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

Thermal Data

Symbol

Parameter

Value

2.8

Units

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient (PCB mount)³

Maximum Thermal Resistance, Junction-ambient

Rthj-a

62.5

110

Rthj-a

Data and specifications subject to change without notice

201105313

12 3 4

中文翻译

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