Datasheet > AP9938GEY

AP9938GEY

更新时间： 2024-09-14 17:15:51

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
5页	102K
描述
2928-8

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中文翻译

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数据手册

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AP9938GEY 数据手册

AP9938GEY-HF

Halogen-Free Product

Advanced Power

Electronics Corp.

DUAL N-CHANNEL ENHANCEMENT

MODE POWER MOSFET

▼ Capable of 1.8V Gate Drive

BV_DSS

R_DS(ON)

I_D

20V

16mΩ

7.5A

D1/D2

▼ Lower on-resistance

▼ Surface Mount Package

▼ RoHS Compliant & Halogen-Free

2928-8

Description

Advanced Power MOSFETs utilized advanced processing

techniques to achieve the lowest possible on-resistance,

extremely efficient and cost-effectiveness device.

The 2928-8 J-lead package provides good on-resistance

performance and space saving like TSOP-6.

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

Drain Current³, V_GS@ 4.5V

Pulsed Drain Current¹

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

7.5

P_D@T_A=25℃

T_STG

Total Power Dissipation

1.38

℃

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

Unit

Rthj-a

Maximum Thermal Resistance, Junction-ambient³

℃/W

Data and specifications subject to change without notice

201501273

12 3 4 5

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