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AP9938AGEY PDF预览

AP9938AGEY

更新时间: 2024-10-29 17:15:47
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
5页 103K
描述
2928-8

AP9938AGEY 数据手册

 浏览型号AP9938AGEY的Datasheet PDF文件第2页浏览型号AP9938AGEY的Datasheet PDF文件第3页浏览型号AP9938AGEY的Datasheet PDF文件第4页浏览型号AP9938AGEY的Datasheet PDF文件第5页 
AP9938AGEY-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
DUAL N-CHANNEL ENHANCEMENT  
MODE POWER MOSFET  
Capable of 2.5V Gate Drive  
BVDSS  
RDS(ON)  
ID  
20V  
16mΩ  
7.5A  
D1/D2  
Low On-resistance  
G2  
S2  
G1  
S1  
Surface Mount Package  
RoHS Compliant & Halogen-Free  
2928-8  
Description  
D1  
S1  
D2  
S2  
AP9938A series are from Advanced Power innovated design  
and silicon process technology to achieve the lowest possible  
on-resistance and fast switching performance. It provides the  
designer with an extreme efficient device for use in a wide  
range of power applications.  
G1  
G2  
The 2928-8 J-lead package provides good on-resistance  
performance and space saving like TSOP-6.  
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)  
Symbol  
Parameter  
Rating  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
20  
Gate-Source Voltage  
+12  
V
Drain Current, VGS @ 4.5V3  
Drain Current, VGS @ 4.5V3  
Pulsed Drain Current1  
ID@TA=25  
ID@TA=70℃  
IDM  
7.5  
A
6
A
40  
A
PD@TA=25℃  
TSTG  
Total Power Dissipation  
1.38  
W
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
90  
Unit  
Rthj-a  
Maximum Thermal Resistance, Junction-ambient3  
/W  
Data and specifications subject to change without notice  
1
201412182  

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