AP9960GJ-HF

更新时间： 2024-09-15 13:05:35

品牌	Logo	应用领域
富鼎先进 - A-POWER		晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数	文件大小	规格书
4页	100K
描述
TRANSISTOR POWER, FET, FET General Purpose Power

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中文翻译

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技术参数
数据手册

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AP9960GJ-HF 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.67
Base Number Matches：	1

AP9960GJ-HF 数据手册

AP9960AGM-HF

Halogen-Free Product

Advanced Power

Electronics Corp.

DUAL N-CHANNEL ENHANCEMENT

MODE POWER MOSFET

▼ Lower Gate Charge

BV_DSS

R_DS(ON)

I_D

40V

16mΩ

8.7A

▼ Simple Drive Requirement

▼ Fast Switching Characteristic

▼ Halogen Free & RoHS Compliant Product

Description

Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-

effectiveness.

SO-8

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

+20

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

Continuous Drain Current³

Pulsed Drain Current¹

8.7

P_D@T_A=25℃

T_STG

Total Power Dissipation

℃

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

62.5

Unit

Rthj-a

Maximum Thermal Resistance, Junction-ambient³

℃/W

Data and specifications subject to change without notice

200909201

12 3 4

中文翻译

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