Datasheet > AP9960GM

AP9960GM

更新时间： 2024-11-05 17:15:23

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
7页	68K
描述
SO-8

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中文翻译

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数据手册

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AP9960GM 数据手册

AP9960GM-HF

Halogen-Free Product

Advanced Power

Electronics Corp.

DUAL N-CHANNEL ENHANCEMENT

MODE POWER MOSFET

▼ Low On-Resistance

BV_DSS

R_DS(ON)

I_D

40V

20mΩ

7.8A

▼ Fast Switching Speed

▼ Surface Mount Package

▼ RoHS Compliant & Halogen-Free

SO-8

Description

AP9960 series are from Advanced Power innovated design and

silicon process technology to achieve the lowest possible on-

resistance and fast switching performance. It provides the

designer with an extreme efficient device for use in a wide

range of power applications.

The SO-8 package is widely preferred for all commercial-

industrial surface mount applications using infrared reflow

technique and suited for voltage conversion or switch

applications.

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

Drain Current, V_GS@ 10V³

Pulsed Drain Current¹

+ 20

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

7.8

6.2

P_D@T_A=25℃

Total Power Dissipation

Linear Derating Factor

0.016

-55 to 150

W/℃

℃

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

Thermal Data

Symbol

Parameter

Value

62.5

Unit

Rthj-amb

Maximum Thermal Resistance, Junction-ambient³

℃/W

Data and specifications subject to change without notice

201501093

12 3 4 5 6 7

中文翻译

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