AP9930GM-HF

更新时间： 2024-10-28 12:52:11

品牌	Logo	应用领域
富鼎先进 - A-POWER		显示器高压
页数	文件大小	规格书
7页	91K
描述
Low On-resistance, Full Bridge Application on LCD Monitor Inverter

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中文翻译

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AP9930GM-HF 数据手册

AP9930GM-HF

Halogen-Free Product

Advanced Power

Electronics Corp.

2N AND 2P-CHANNEL ENHANCEMENT

MODE POWER MOSFET

▼ Simple Drive Requirement

P2G

N2D/P2D

P1S/P2S

P1G

▼ Low On-resistance

▼ Full Bridge Application on

LCD Monitor Inverter

▼ RoHS Compliant

N-CH BV_DSS

30V

33mΩ

5.5A

R_DS(ON)

I_D

P-CH BV_DSS

R_DS(ON)

N2G

N1S/N2S

-30V

N1D/P1D

N1G

SO-8

55mΩ

-4.1A

Description

I_D

Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-

effectiveness.

P1S

P2S

P1G

P2G

P2N2D

P1N1D

The SO-8 package is widely preferred for commercial-industrial

surface mount applications and suited for low voltage applications

such as DC/DC converters.

N2G

N1G

N2S

N1S

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

N-channel

P-channel

V_DS

V_GS

Drain-Source Voltage

±20

5.5

4.4

-30

±20

-4.1

-3.3

-20

Gate-Source Voltage

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

Continuous Drain Current³

Pulsed Drain Current¹

P_D@T_A=25℃

Total Power Dissipation

Linear Derating Factor

1.38

0.01

W/℃

℃

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

Thermal Data

Symbol

Parameter

Value

Unit

Rthj-a

Maximum Thermal Resistance, Junction-ambient³

℃/W

Data and specifications subject to change without notice

200805154

12 3 4 5 6 7

中文翻译

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