AP9926M

更新时间： 2024-10-28 03:19:11

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
6页	83K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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AP9926M 数据手册

AP9926M

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Low on-resistance

BV_DSS

R_DS(ON)

I_D

20V

30mΩ

▼ Capable of 2.5V gate drive

▼ Low drive current

▼ Surface mount package

SO-8

Description

The Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

ruggedized device design, ultra low on-resistance and

cost-effectiveness.

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current³, V_GS@ 4.5V

Pulsed Drain Current^1,2

± 12

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

4.8

P_D@T_A=25℃

Total Power Dissipation

Linear Derating Factor

0.016

-55 to 150

W/℃

℃

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

℃

Thermal Data

Symbol

Parameter

Value

62.5

Unit

Rthj-a

Thermal Resistance Junction-ambient³

Max.

℃/W

Data and specifications subject to change without notice

20020426

12 3 4 5 6

中文翻译

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