Datasheet > AP9928EO

AP9928EO

更新时间： 2024-10-27 21:55:23

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描述
POWER MOSFET

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AP9928EO 数据手册

AP9928EO

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Low on-resistance

BV_DSS

R_DS(ON)

I_D

20V

23mΩ

▼ Capable of 2.5V gate drive

▼ Optimal DC/DC battery application

TSSOP-8

Description

The Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

ruggedized device design, ultra low on-resistance and

cost-effectiveness.

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

Drain Current³, V_GS@ 4.5V

Pulsed Drain Current¹

±12

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

3.5

P_D@T_A=25℃

Total Power Dissipation

Linear Derating Factor

0.008

-55 to 150

W/℃

℃

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

Thermal Data

Symbol

Parameter

Value

125

Unit

Rthj-a

Thermal Resistance Junction-ambient³

Max.

℃/W

Data and specifications subject to change without notice

200206031

12 3 4 5 6

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与AP9928EO相关器件

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AP9930GM	A-POWER	获取价格	2N AND 2P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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AP9930M	A-POWER	获取价格	2N AND 2P-CHANNEL ENHANCEMENT
AP9932GM	A-POWER	获取价格	Simple Drive Requirement, Full Bridge Application on LCD Monitor Inverter
AP9934GM	A-POWER	获取价格	2N AND 2P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9936GM	A-POWER	获取价格	DC-DC Application, Dual N-channel Device, Surface Mount Package
AP9936GM-HF	A-POWER	获取价格	DC-DC Application, Dual N-channel Device, Surface Mount Package