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AP9563GJ PDF预览

AP9563GJ

更新时间: 2024-10-27 08:32:11
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
4页 75K
描述
P-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP9563GJ 技术参数

生命周期:Contact Manufacturer零件包装代码:TO-251
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.8配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:40 V最大漏极电流 (ID):26 A
最大漏源导通电阻:0.04 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-251JESD-30 代码:R-PSIP-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE极性/信道类型:P-CHANNEL
最大脉冲漏极电流 (IDM):64 A认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICON

AP9563GJ 数据手册

 浏览型号AP9563GJ的Datasheet PDF文件第2页浏览型号AP9563GJ的Datasheet PDF文件第3页浏览型号AP9563GJ的Datasheet PDF文件第4页 
AP9563GH/J  
Pb Free Plating Product  
Advanced Power  
Electronics Corp.  
P-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
Lower On-resistance  
BVDSS  
RDS(ON)  
ID  
-40V  
40mΩ  
-26A  
Simple Drive Requirement  
Fast Switching Characteristic  
G
Description  
G
D
S
The TO-252 package is universally preferred for all commercial-  
industrial surface mount applications and suited for low voltage  
applications such as DC/DC converters. The through-hole version  
(AP9563GJ) is available for low-profile applications.  
TO-252(H)  
TO-251(J)  
G
D
S
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
-40  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
±25  
-26  
V
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
ID@TC=25  
ID@TC=100℃  
IDM  
A
-16  
A
-64  
A
PD@TC=25℃  
Total Power Dissipation  
44.6  
0.36  
W
Linear Derating Factor  
W/℃  
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
2.8  
Units  
/W  
/W  
Rthj-c  
Thermal Resistance Junction-case  
Thermal Resistance Junction-ambient  
Max.  
Max.  
Rthj-a  
110  
Data and specifications subject to change without notice  
200227041  

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