Datasheet > AP9565GEH_14

AP9565GEH_14

更新时间： 2024-10-29 01:20:47

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
4页	136K
描述
Simple Drive Requirement

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AP9565GEH_14 数据手册

AP9565GEH/J

RoHS-compliant Product

Advanced Power

Electronics Corp.

P-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Simple Drive Requirement

BV_DSS

R_DS(ON)

I_D

-40V

38mΩ

-24A

▼ Lower On-resistance

▼ Fast Switching Characteristic

Description

Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

TO-252(H)

ruggedized device design, low on-resistance and cost-effectiveness.

The TO-252 package is widely preferred for commercial-industrial

surface mount applications and suited for low voltage applications

such as DC/DC converters. The through-hole version (AP9565GEJ) is

available for low-profile applications.

TO-251(J)

Absolute Maximum Ratings

Symbol

Parameter

Rating

-40

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

+16

-24

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current¹

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

-15

-80

P_D@T_C=25℃

Total Power Dissipation

35.7

0.28

Linear Derating Factor

W/℃

℃

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

Thermal Data

Symbol

Parameter

Value

Units

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient (PCB mount)³

Maximum Thermal Resistance, Junction-ambient

3.5

Rthj-a

62.5

110

Rthj-a

Data and specifications subject to change without notice

200903094

12 3 4

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