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AP9566GH PDF预览

AP9566GH

更新时间: 2024-10-28 12:52:11
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
5页 172K
描述
P-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP9566GH 数据手册

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AP9566GH  
RoHS-compliant Product  
Advanced Power  
Electronics Corp.  
P-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
Lower Gate Charge  
BVDSS  
RDS(ON)  
ID  
-40V  
Simple Drive Requirement  
65mΩ  
-13.6A  
Fast Switching Characteristic  
G
Description  
G
Advanced Power MOSFETs from APEC provide the designer with  
the best combination of fast switching, ruggedized device design,  
low on-resistance and cost-effectiveness.  
D
S
TO-252(H)  
The TO-252 package is widely preferred for commercial-industrial  
surface mount applications and suited for low voltage applications  
such as DC/DC converters.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
-40  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
+20  
V
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
ID@TC=25℃  
ID@TC=100℃  
IDM  
-13.6  
A
-8.6  
A
-50  
A
PD@TC=25℃  
TSTG  
Total Power Dissipation  
20.8  
W
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
6.0  
Units  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance Junction-case  
Maximum Thermal Resistance Junction-ambient  
Rthj-a  
110  
Data and specifications subject to change without notice  
1
200806161  

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