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AP9565BGH-HF PDF预览

AP9565BGH-HF

更新时间: 2024-10-28 01:15:39
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
5页 102K
描述
Simple Drive Requirement

AP9565BGH-HF 数据手册

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AP9565BGH/J-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
P-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
Lower Gate Charge  
BVDSS  
RDS(ON)  
ID  
-40V  
52mΩ  
-17A  
Simple Drive Requirement  
Fast Switching Characteristic  
G
RoHS Compliant & Halogen-Free  
Description  
G
D
Advanced Power MOSFETs from APEC provide the designer with the  
best combination of fast switching, ruggedized device design, low on-  
resistance and cost-effectiveness.  
S
TO-252(H)  
The TO-252 package is widely preferred for commercial-industrial  
surface mount applications and suited for low voltage applications such  
as DC/DC converters. The through-hole version (AP9565BGJ) is  
available for low-profile applications.  
G
D
S
TO-251(J)  
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)  
Symbol  
Parameter  
Rating  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
-40  
Gate-Source Voltage  
+20  
V
Drain Current, VGS @ 10V  
Drain Current, VGS @ 10V  
Pulsed Drain Current1  
ID@TC=25  
ID@TC=100℃  
IDM  
-17  
A
-11  
A
-60  
A
PD@TC=25℃  
Total Power Dissipation  
25  
W
Linear Derating Factor  
0.2  
W/℃  
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
/W  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient (PCB mount)3  
Maximum Thermal Resistance, Junction-ambient  
5.0  
62.5  
110  
Rthj-a  
Rthj-a  
Data and specifications subject to change without notice  
1
201501273  

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