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AP9563GK PDF预览

AP9563GK

更新时间: 2024-10-27 03:19:11
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
4页 76K
描述
P-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP9563GK 技术参数

生命周期:Contact Manufacturer包装说明:SMALL OUTLINE, R-PDSO-G4
针数:4Reach Compliance Code:compliant
HTS代码:8541.29.00.75风险等级:5.65
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:40 V最大漏源导通电阻:0.04 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G4
元件数量:1端子数量:4
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:P-CHANNEL
最大脉冲漏极电流 (IDM):30 A认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

AP9563GK 数据手册

 浏览型号AP9563GK的Datasheet PDF文件第2页浏览型号AP9563GK的Datasheet PDF文件第3页浏览型号AP9563GK的Datasheet PDF文件第4页 
AP9563GK  
Pb Free Plating Product  
Advanced Power  
Electronics Corp.  
P-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
Simple Drive Requirement  
BVDSS  
RDS(ON)  
ID  
-40V  
40mΩ  
-6.8A  
D
Lower Gate Charge  
Fast Switching Characteristic  
RoHS Compliant  
S
D
G
SOT-223  
Description  
D
S
The Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
low on-resistance and cost-effectiveness.  
G
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
-40  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
±25  
V
ID@TA=25  
ID@TA=70℃  
IDM  
Continuous Drain Current3  
Continuous Drain Current3  
Pulsed Drain Current1  
-6.8  
A
-5.4  
A
-30  
A
PD@TA=25℃  
Total Power Dissipation  
2.8  
W
Linear Derating Factor  
0.02  
W/℃  
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
45  
Unit  
Rthj-a  
Thermal Resistance Junction-ambient3  
Max.  
/W  
Data and specifications subject to change without notice  
200914051-1/4  

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