Datasheet > AP9563GK_12

AP9563GK_12

更新时间： 2024-10-27 12:52:11

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
4页	101K
描述
P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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AP9563GK_12 数据手册

AP9563GK

RoHS-compliat Product

Advanced Power

Electronics Corp.

P-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Simple Drive Requirement

BV_DSS

R_DS(ON)

I_D

-40V

40mΩ

-6.8A

▼ Lower Gate Charge

▼ Fast Switching Characteristic

SOT-223

Description

Advanced Power MOSFETs from APEC provide the designer with

the best combination of fast switching, low on-resistance and cost-

effectiveness.

Absolute Maximum Ratings

Symbol

Parameter

Rating

-40

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

+25

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

Continuous Drain Current³

Pulsed Drain Current¹

-6.8

-5.4

-30

P_D@T_A=25℃

Total Power Dissipation

2.8

Linear Derating Factor

0.02

W/℃

℃

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

Thermal Data

Symbol

Parameter

Value

Unit

Rthj-a

Maximum Thermal Resistance, Junction-ambient³

℃/W

Data and specifications subject to change without notice

201208013

12 3 4

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