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AP9565GEM-HF

更新时间： 2024-10-28 13:05:35

品牌	Logo	应用领域
富鼎先进 - A-POWER		栅极驱动
页数	文件大小	规格书
4页	102K
描述
Power Field-Effect Transistor

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中文翻译

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技术参数
数据手册

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AP9565GEM-HF 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.65	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

AP9565GEM-HF 数据手册

AP9565AGH/J

RoHS-compliant Product

Advanced Power

Electronics Corp.

P-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Lower Gate Charge

BV_DSS

R_DS(ON)

I_D

-40V

▼ Simple Drive Requirement

42mΩ

-18.5A

▼ Fast Switching Characteristic

Description

Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

TO-252(H)

ruggedized device design, low on-resistance and cost-effectiveness.

The TO-252 package is widely preferred for commercial-industrial

surface mount applications and suited for low voltage applications

such as DC/DC converters. The through-hole version (AP9565AGJ)

is available for low-profile applications.

TO-251(J)

Absolute Maximum Ratings

Symbol

Parameter

Rating

-40

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

+20

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current¹

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

-18.5

-14.8

-72

P_D@T_C=25℃

Total Power Dissipation

Linear Derating Factor

0.2

W/℃

℃

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

Thermal Data

Symbol

Parameter

Value

5.0

Units

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient (PCB mount)³

Maximum Thermal Resistance, Junction-ambient

Rthj-a

62.5

110

Rthj-a

Data and specifications subject to change without notice

200906183

12 3 4

中文翻译

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