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AP9563GM-HF PDF预览

AP9563GM-HF

更新时间: 2024-10-27 12:52:11
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
4页 62K
描述
P-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP9563GM-HF 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
零件包装代码:SOT包装说明:SMALL OUTLINE, R-PDSO-G8
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.64配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:40 V最大漏极电流 (ID):6 A
最大漏源导通电阻:0.04 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8元件数量:1
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:P-CHANNEL
最大脉冲漏极电流 (IDM):30 A认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

AP9563GM-HF 数据手册

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AP9563GM-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
P-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
Simple Drive Requirement  
BVDSS  
RDS(ON)  
ID  
-40V  
40mΩ  
-6A  
D
D
D
Lower Gate Charge  
D
Fast Switching Characteristic  
G
S
RoHS Compliant & Halogen-Free  
S
S
SO-8  
Description  
D
S
Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and cost-effectiveness.  
G
The SO-8 package is widely preferred for all commercial-industrial  
surface mount applications and suited for low voltage applications  
such as DC/DC converters.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
-40  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
+25  
V
ID@TA=25  
ID@TA=70℃  
IDM  
Continuous Drain Current3  
Continuous Drain Current3  
Pulsed Drain Current1  
-6  
A
-4.8  
A
-30  
A
PD@TA=25℃  
Total Power Dissipation  
2.5  
W
Linear Derating Factor  
0.02  
W/℃  
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
50  
Unit  
Rthj-a  
Maximum Thermal Resistance, Junction-ambient3  
/W  
Data and specifications subject to change without notice  
1
201004203  

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