AP4409GEM

更新时间： 2024-11-18 04:06:23

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
4页	81K
描述
P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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AP4409GEM 数据手册

AP4409GEM

Pb Free Plating Product

Advanced Power

Electronics Corp.

P-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Simple Drive Requirement

BV_DSS

R_DS(ON)

I_D

-35V

▼ Low On-resistance

7.5mΩ

-14.5A

▼ Fast Switching Characteristic

▼ RoHS Compliant

SO-8

Description

The Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

The SO-8 package is universally preferred for all commercial-industrial

surface mount applications and suited for low voltage applications such as

DC/DC converters.

Absolute Maximum Ratings

Symbol

Parameter

Rating

-35

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

±20

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

Continuous Drain Current^3a

Pulsed Drain Current¹

-14.5

-12

-50

P_D@T_A=25℃

Total Power Dissipation

2.5

Linear Derating Factor

0.02

W/℃

℃

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

Thermal Data

Symbol

Parameter

Thermal Resistance Junction-ambient^3a

Value

Unit

Rthj-a

Max

℃/W

Data and specifications subject to change without notice

200327063-1/4

12 3 4

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