AP4413M

更新时间： 2024-11-20 04:06:23

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
4页	107K
描述
P-CHANNEL ENHANCEMENT MODE

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AP4413M 数据手册

AP4413M

Advanced Power

Electronics Corp.

P-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Simple Drive Requirement

BV_DSS

R_DS(ON)

I_D

-20V

30mΩ

-7.8A

▼ Low On-resistance

▼ Fast Switching Characteristic

SO-8

Description

The Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

The SO-8 package is universally preferred for all commercial-industrial

surface mount applications and suited for low voltage applications such

as DC/DC converters.

Absolute Maximum Ratings

Symbol

Parameter

Drain-Source Voltage

Rating

-20

Units

V_DS

V_GS

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

±20

-7.8

-6.2

-30

Gate-Source Voltage

Continuous Drain Current³

Pulsed Drain Current¹

P_D@T_A=25℃

Total Power Dissipation

2.5

Linear Derating Factor

Storage Temperature Range

Operating Junction Temperature Range

0.02

-55 to 150

W/℃

℃

T_STG

T_J

Thermal Data

Symbol

Rthj-a

Parameter

Value

Unit

℃/W

Thermal Resistance Junction-ambient³

Max.

Data and specifications subject to change without notice

200413042

12 3 4

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