Datasheet > AP4420GJ_14

AP4420GJ_14

更新时间： 2024-11-19 01:22:23

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
4页	98K
描述
Simple Drive Requirement

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数据手册

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AP4420GJ_14 数据手册

AP4420GH/J

Pb Free Plating Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Lower Gate Charge

BV_DSS

R_DS(ON)

I_D

35V

10mΩ

52A

▼ Simple Drive Requirement

▼ Fast Switching Characteristic

▼ RoHS Compliant

Description

The Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

□

TO-252(H)

The TO-252 package is universally preferred for all commercial-

industrial surface mount applications and suited for low voltage

applications such as DC/DC converters. The through-hole version

(AP4420GJ) are available for low-profile applications.

TO-251(J)

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

±20

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

Continuous Drain Current

Pulsed Drain Current¹

200

P_D@T_C=25℃

Total Power Dissipation

W/℃

℃

Linear Derating Factor

0.35

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

Thermal Data

Symbol

Parameter

Value

Units

℃/W

Rthj-c

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max.

2.8

Rthj-a

110

Data & specifications subject to change without notice

200703061-1/4

12 3 4

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