生命周期: | Obsolete | 零件包装代码: | TO-251 |
包装说明: | ROHS COMPLIANT PACKAGE-3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.83 | Is Samacsys: | N |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 35 V |
最大漏极电流 (ID): | 25 A | 最大漏源导通电阻: | 0.038 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-251 |
JESD-30 代码: | R-PSIP-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
极性/信道类型: | P-CHANNEL | 最大脉冲漏极电流 (IDM): | 70 A |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
AP4419GH_14 | A-POWER | Simple Drive Requirement |
获取价格 |
|
AP4419GJ | A-POWER | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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|
AP4419GJ_14 | A-POWER | Simple Drive Requirement |
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|
AP4420GH | A-POWER | Lower Gate Charge, Simple Drive Requirement |
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|
AP4420GH_14 | A-POWER | Simple Drive Requirement |
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|
AP4420GJ | A-POWER | Lower Gate Charge, Simple Drive Requirement |
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