5秒后页面跳转
AP4430GEM PDF预览

AP4430GEM

更新时间: 2024-11-18 12:52:07
品牌 Logo 应用领域
富鼎先进 - A-POWER 晶体开关晶体管功率场效应晶体管脉冲光电二极管驱动
页数 文件大小 规格书
5页 255K
描述
Simple Drive Requirement, Fast Switching Characteristic

AP4430GEM 技术参数

生命周期:Obsolete零件包装代码:SOT
包装说明:ROHS COMPLIANT, SOP-8针数:8
Reach Compliance Code:compliantHTS代码:8541.29.00.75
风险等级:5.76Is Samacsys:N
其他特性:ULTRA-LOW RESISTANCE配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏源导通电阻:0.004 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
元件数量:1端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):80 A认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

AP4430GEM 数据手册

 浏览型号AP4430GEM的Datasheet PDF文件第2页浏览型号AP4430GEM的Datasheet PDF文件第3页浏览型号AP4430GEM的Datasheet PDF文件第4页浏览型号AP4430GEM的Datasheet PDF文件第5页 
AP4430GEM  
RoHS-compliant Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
Simple Drive Requirement  
BVDSS  
RDS(ON)  
ID  
30V  
4mΩ  
20A  
D
D
Fast Switching Characteristic  
Low On-resistance  
D
D
G
S
S
S
SO-8  
Description  
D
S
G
Advanced Power MOSFETs from APEC provide the designer  
with the best combination of fast switching,ruggedized device  
design, ultra low on-resistance and cost-effectiveness.  
The SO-8 package is widely preferred for all commercial-industrial  
surface mount applications and suited for low voltage applications  
such as DC/DC converters.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
30  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
±12  
20  
V
ID@TA=25℃  
ID@TA=70℃  
IDM  
Continuous Drain Current3  
Continuous Drain Current3  
Pulsed Drain Current1  
A
16  
A
80  
A
PD@TA=25℃  
Total Power Dissipation  
2.5  
W
W/℃  
Linear Derating Factor  
0.02  
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
50  
Unit  
Rthj-a  
Maximum Thermal Resistance, Junction-ambient3  
/W  
Data and specifications subject to change without notice  
1
200806053  

与AP4430GEM相关器件

型号 品牌 获取价格 描述 数据表
AP4430GM-HF A-POWER

获取价格

Ultra_Low On-resistance, Simple Drive Requirement
AP4432GM A-POWER

获取价格

Simple Drive Requirement, Fast Switching Characteristic
AP4433GH-HF A-POWER

获取价格

Lower Gate Charge, Simple Drive Requirement
AP4433GM-HF A-POWER

获取价格

Simple Drive Requirement, Lower Gate Charge
AP4434AGH-HF A-POWER

获取价格

TRANSISTOR GENERAL PURPOSE POWER, FET General Purpose Power
AP4434AGM-HF A-POWER

获取价格

Lower Gate Charge, Capable of 1.8V Gate Drive
AP4434AGYT-HF A-POWER

获取价格

Simple Drive Requirement, Small Size & Lower Profile
AP4434GH-HF A-POWER

获取价格

Lower Gate Charge, Capable of 2.5V Gate Drive
AP4434GM A-POWER

获取价格

Low on-resistance, Capable of 2.5V gate drive
AP4435D A-POWER

获取价格

P-CHANNEL ENHANCEMENT MODE POWER MOSFET