AP4419GH/J
Pb Free Plating Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
▼ Lower On-resistance
BVDSS
RDS(ON)
ID
-35V
38mΩ
-25A
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ RoHS Compliant
G
Description
G
D
S
TO-252(H)
TO-251(J)
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP4419GJ) is available for low-profile applications.
G
D
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
-35
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
±20
-25
V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
ID@TC=25℃
ID@TC=100℃
IDM
A
-16
A
-70
A
PD@TC=25℃
Total Power Dissipation
34.7
0.28
W
Linear Derating Factor
W/℃
℃
℃
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Value
3.6
Units
℃/W
℃/W
Rthj-c
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Rthj-a
110
Data and specifications subject to change without notice
200428051-1/4