Datasheet > 晶体管 > 功率场效应晶体管> AP4424AGM-HF

AP4424AGM-HF

更新时间： 2024-11-18 13:05:35

品牌	Logo	应用领域
富鼎先进 - A-POWER		晶体晶体管功率场效应晶体管开关脉冲光电二极管驱动
页数	文件大小	规格书
4页	99K
描述
Power Field-Effect Transistor

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中文翻译

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技术参数
数据手册

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AP4424AGM-HF 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.68	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

AP4424AGM-HF 数据手册

AP4424AGM

RoHS-compliant Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Low On-resistance

BV_DSS

R_DS(ON)

I_D

30V

9mΩ

13A

▼ Simple Drive Requirement

▼ Fast Switching Characteristic

SO-8

Description

Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

The SO-8 package is widely preferred for commercial-industrial

surface mount applications and suited for low voltage applications

such as DC/DC converters.

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

+20

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

Continuous Drain Current³

Pulsed Drain Current¹

10.5

P_D@T_A=25℃

T_STG

Total Power Dissipation

2.5

℃

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

Unit

Rthj-a

Maximum Thermal Resistance, Junction-ambient³

℃/W

Data and specifications subject to change without notice

200902231

12 3 4

中文翻译

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AP4428GM	A-POWER	获取价格	Simple Drive Requirement, Fast Switching Characteristic
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