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AP4425GO PDF预览

AP4425GO

更新时间: 2024-11-18 19:58:43
品牌 Logo 应用领域
富鼎先进 - A-POWER 开关光电二极管晶体管
页数 文件大小 规格书
4页 115K
描述
TRANSISTOR 4200 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, TSSOP-8, FET General Purpose Small Signal

AP4425GO 技术参数

生命周期:Obsolete零件包装代码:TSSOP
包装说明:ROHS COMPLIANT, TSSOP-8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.84
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (ID):4.2 A最大漏源导通电阻:0.052 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
元件数量:1端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:P-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

AP4425GO 数据手册

 浏览型号AP4425GO的Datasheet PDF文件第2页浏览型号AP4425GO的Datasheet PDF文件第3页浏览型号AP4425GO的Datasheet PDF文件第4页 
AP4425GO  
RoHS-compliant Product  
Advanced Power  
Electronics Corp.  
P-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
Small & Thin Package  
BVDSS  
RDS(ON)  
ID  
-20V  
42mΩ  
-4.2A  
D
S
S
D
Fast Switching Characteristic  
Capable of 1.8V Gate Drive  
G
S
S
TSSOP-8  
D
D
S
Description  
G
The Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, ultra low on-resistance and  
cost-effectiveness.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
- 20  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
±8  
V
ID@TA=25  
ID@TA=70℃  
IDM  
Continuous Drain Current3  
Continuous Drain Current3  
Pulsed Drain Current1  
-4.2  
A
-3.3  
A
-30  
A
PD@TA=25℃  
Total Power Dissipation  
1
W
Linear Derating Factor  
0.01  
W/℃  
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
Unit  
/W  
/W  
Rthj-a  
Thermal Resistance Junction-ambient3  
Max.  
Max.  
120  
70  
Rthj-L  
Thermal Resistance Junction-lead  
Data and specifications subject to change without notice  
200312072-1/4  

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