Datasheet > AP4417GJ_14

AP4417GJ_14

更新时间： 2024-11-21 01:22:55

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
4页	104K
描述
Simple Drive Requirement

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中文翻译

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数据手册

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AP4417GJ_14 数据手册

AP4417GH/J

RoHS-compliant Product

Advanced Power

Electronics Corp.

P-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Lower On-resistance

BV_DSS

R_DS(ON)

I_D

-35V

75mΩ

-15A

▼ Simple Drive Requirement

▼ Fast Switching Characteristic

▼ RoHS Compliant

Description

TO-252(H)

TO-251(J)

The TO-252 package is widely preferred for all commercial-industrial

surface mount applications and suited for low voltage applications

such as DC/DC converters. The through-hole version (AP4417GJ) is

available for low-profile applications.

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

-35

+20

-15

-9

Gate-Source Voltage

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current¹

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

-40

P_D@T_C=25℃

Total Power Dissipation

Linear Derating Factor

0.21

W/℃

℃

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

Thermal Data

Symbol

Parameter

Value

4.8

Units

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient (PCB mount)³

Maximum Thermal Resistance, Junction-ambient

Rthj-a

62.5

110

Rthj-a

Data and specifications subject to change without notice

200902252

12 3 4

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