AP4415GJ

更新时间： 2024-01-05 19:17:14

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
6页	181K
描述
P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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技术参数
数据手册

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AP4415GJ 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.84

AP4415GJ 数据手册

AP4415GH/J

RoHS-compliant Product

Advanced Power

Electronics Corp.

P-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Simple Drive Requirement

BV_DSS

R_DS(ON)

I_D

-35V

36mΩ

-24A

▼ Low On-resistance

▼ Fast Switching Characteristic

Description

The TO-252 package is widely preferred for all commercial-industrial

surface mount applications and suited for low voltage applications

such as DC/DC converters. The through-hole version (AP4415GJ) is

available for low-profile applications.

TO-252(H)

TO-251(J)

Absolute Maximum Ratings

Symbol

Parameter

Rating

-35

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

±25

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current¹

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

-24

-15

-80

P_D@T_C=25℃

Total Power Dissipation

31.25

0.25

Linear Derating Factor

W/℃

℃

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

Thermal Data

Symbol

Parameter

Value

Units

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient

Rthj-a

110

Data and specifications subject to change without notice

200805263

12 3 4 5 6

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