Datasheet > AP4412M

AP4412M

更新时间： 2024-11-18 08:31:59

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
6页	83K
描述
N-CHANNEL ENHANCEMENT MODE

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AP4412M 数据手册

AP4412M

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Low Gate Charge

BV_DSS

R_DS(ON)

I_D

25V

33mΩ

▼ Simple Drive Requirement

▼ Fast Switching

SO-8

Description

The Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

ruggedized device design, ultra low on-resistance and

cost-effectiveness.

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

± 20

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

Continuous Drain Current³

Pulsed Drain Current¹

5.8

P_D@T_A=25℃

Total Power Dissipation

2.5

Linear Derating Factor

0.02

W/℃

℃

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

Thermal Data

Symbol

Parameter

Value

Unit

Rthj-amb

Thermal Resistance Junction-ambient³

Max.

℃/W

Data and specifications subject to change without notice

20020318

12 3 4 5 6

中文翻译

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