AP4410AGM

更新时间： 2024-01-17 12:31:45

品牌	Logo	应用领域
富鼎先进 - A-POWER		驱动
页数	文件大小	规格书
4页	63K
描述
Simple Drive Requirement, Low On-resistance

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

AP4410AGM 数据手册

AP4410AGM

RoHS-compliant Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Simple Drive Requirement

BV_DSS

R_DS(ON)

I_D

30V

13.5mΩ

10A

▼ Low On-resistance

▼ Fast Switching Characteristic

SO-8

Description

Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

The SO-8 package is widely preferred for commercial-industrial

surface mount applications and suited for low voltage applications

such as DC/DC converters.

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

+20

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

Continuous Drain Current³

Pulsed Drain Current¹

P_D@T_A=25℃

T_STG

Total Power Dissipation

2.5

^oC

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

Unit

^oC/W

Rthj-a

Maximum Thermal Resistance, Junction-ambient³

Data and specifications subject to change without notice

201003303

12 3 4

下载PDF

与AP4410AGM相关器件

型号	品牌	描述	获取价格	数据表
AP4410GM	A-POWER	Low On-Resistance, Fast Switching	获取价格
AP4410GM-HF	A-POWER	Power Field-Effect Transistor	获取价格
AP4410M	A-POWER	N-CHANNEL ENHANCEMENT MODE	获取价格
AP4411GM	A-POWER	Simple Drive Requirement, Low On-resistance	获取价格
AP4411GM-HF	A-POWER	TRANSISTOR POWER, FET, FET General Purpose Power	获取价格
AP4412GM	A-POWER	N-CHANNEL ENHANCEMENT MODE POWER MOSFET	获取价格