是否Rohs认证: | 符合 | 生命周期: | Contact Manufacturer |
包装说明: | SMALL OUTLINE, R-PDSO-G8 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.71 | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (ID): | 8.2 A |
最大漏源导通电阻: | 0.025 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G8 | 元件数量: | 1 |
端子数量: | 8 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | P-CHANNEL | 最大脉冲漏极电流 (IDM): | 40 A |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
AP4412GM | A-POWER |
获取价格 |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
AP4412M | A-POWER |
获取价格 |
N-CHANNEL ENHANCEMENT MODE | |
AP4413GM | A-POWER |
获取价格 |
Simple Drive Requirement, Low On-resistance | |
AP4413GM-HF | A-POWER |
获取价格 |
TRANSISTOR POWER, FET, FET General Purpose Power | |
AP4413M | A-POWER |
获取价格 |
P-CHANNEL ENHANCEMENT MODE | |
AP4415GH | A-POWER |
获取价格 |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
AP4415GJ | A-POWER |
获取价格 |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
AP4415GM | A-POWER |
获取价格 |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
AP4416GH | A-POWER |
获取价格 |
Lower Gate Charge, Simple Drive Requirement | |
AP4416GJ | A-POWER |
获取价格 |
TRANSISTOR 20 A, 35 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, ROHS COMPLIANT PAC |