Datasheet > AP10NB2R5WL

AP10NB2R5WL

更新时间： 2024-12-01 17:15:51

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
8页	247K
描述
TO-247

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AP10NB2R5WL 数据手册

AP10NB2R5WL

Halogen-Free Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ 100% R_g& UIS Test

BV_DSS

100V

▼ Simple Drive Requirement

R_DS(ON)

2.5mΩ

▼ Fast Switching Characteristic

▼ RoHS Compliant & Halogen-Free

Description

AP10NB2R5 series are from Advanced Power innovated design

and silicon process technology to achieve the lowest possible on-

resistance and fast switching performance. It provides the designer

with an extreme efficient device for use in a wide range of power

applications.

TO-247 (WL)

The TO-247 package is widely preferred for commercial-industrial

applications. The device is suited for switch mode power supplies,

DC-AC converters and high current high speed switching circuits.

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

100

Gate-Source Voltage

+20

Drain Current, V_GS@ 10V⁵(Silicon Limited)

Drain Current, V_GS@ 10V⁵(Package Limited)

Drain Current, V_GS@ 10V

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

220

195

156

Pulsed Drain Current¹

600

P_D@T_C=25℃

P_D@T_A=25℃

E_AS

Total Power Dissipation

250

℃

Total Power Dissipation

3.75

Single Pulse Avalanche Energy³

Storage Temperature Range

Operating Junction Temperature Range

500

T_STG

-55 to 175

T_J

Thermal Data

Symbol

Parameter

Value

Units

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient

0.6

Rthj-a

202306261

12 3 4 5 6 7 8

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