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AP10TN028YT PDF预览

AP10TN028YT

更新时间: 2024-11-02 17:15:47
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
6页 134K
描述
PMPAK-3x3

AP10TN028YT 数据手册

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AP10TN028YT  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
Simple Drive Requirement  
BVDSS  
RDS(ON)  
ID  
100V  
28mΩ  
7.5A  
D
S
Small Size & Lower Profile  
RoHS Compliant & Halogen-Free  
G
D
D
Description  
D
D
AP10TN028 series are from Advanced Power innovated design and  
silicon process technology to achieve the lowest possible on-resistance  
and fast switching performance. It provides the designer with an extreme  
efficient device for use in a wide range of power applications.  
S
The PMPAK® 3x3 package is special for voltage conversion application  
using standard infrared reflow technique with the backside heat sink to  
achieve the good thermal performance.  
S
S
G
PMPAK® 3 x 3  
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)  
Symbol  
Parameter  
Rating  
Units  
V
.
VDS  
VGS  
Drain-Source Voltage  
100  
Gate-Source Voltage  
+20  
V
Drain Current, VGS @ 10V3  
Drain Current, VGS @ 10V3  
Pulsed Drain Current1  
Total Power Dissipation  
ID@TA=25  
ID@TA=70℃  
IDM  
7.5  
A
6
A
30  
A
PD@TA=25℃  
TSTG  
3.125  
-55 to 150  
-55 to 150  
W
Storage Temperature Range  
TJ  
Operating Junction Temperature Range  
Thermal Data  
Symbol  
Parameter  
Value  
Unit  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient3  
5
Rthj-a  
40  
Data and specifications subject to change without notice  
1
201601071