AP10TN028YT
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
RDS(ON)
ID
100V
28mΩ
7.5A
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▼ Small Size & Lower Profile
▼ RoHS Compliant & Halogen-Free
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Description
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AP10TN028 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-resistance
and fast switching performance. It provides the designer with an extreme
efficient device for use in a wide range of power applications.
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The PMPAK® 3x3 package is special for voltage conversion application
using standard infrared reflow technique with the backside heat sink to
achieve the good thermal performance.
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PMPAK® 3 x 3
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
V
.
VDS
VGS
Drain-Source Voltage
100
Gate-Source Voltage
+20
V
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
Total Power Dissipation
ID@TA=25℃
ID@TA=70℃
IDM
7.5
A
6
A
30
A
PD@TA=25℃
TSTG
3.125
-55 to 150
-55 to 150
W
℃
℃
Storage Temperature Range
TJ
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Value
Unit
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient3
5
Rthj-a
40
Data and specifications subject to change without notice
1
201601071