Datasheet > AP10NB5R0LXT

AP10NB5R0LXT

更新时间： 2024-11-19 17:15:51

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
8页	311K
描述
PMPAK-5x6X

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AP10NB5R0LXT 数据手册

AP10NB5R0LXT

Halogen-Free Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ 100% R_g& UIS Test

BV_DSS

100V

▼ Simple Drive Requirement

▼ Low On-resistance

R_DS(ON)

5mΩ

▼ RoHS Compliant & Halogen-Free

Description

AP10NB5R0L series are from Advanced Power innovated design and

silicon process technology to achieve the lowest possible on-resistance

and fast switching performance. It provides the designer with an

extreme efficient device for use in a wide range of power applications.

PMPAK^®5x6X

The PMPAK

5x6X package is special for DC-DC converters

application and the foot print is compatible with SO-8 with backside

heat sink and lower profile.

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol

Parameter

Drain-Source Voltage

Gate-Source Voltage

Rating

Units

V_DS

V_GS

100

+20

Drain Current, V_GS@ 10V⁶(Silicon Limited)

Drain Current, V_GS@ 10V⁶(Package Limited)

Drain Current , V_GS@ 10V

Drain Current, V_GS@ 10V³

I_D@T_C=25℃

I_D@T_C=100℃

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

112

100

24.5

20.5

Pulsed Drain Current¹

400

P_D@T_C=25℃

P_D@T_A=25℃

E_AS

Total Power Dissipation

Total Power Dissipation³

Single Pulse Avalanche Energy⁴

Storage Temperature Range

Operating Junction Temperature Range

125

℃

112.5

-55 to 175

T_STG

T_J

Thermal Data

Symbol

Parameter

Value

Unit

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient³

1.2

Rthj-a

202310241

12 3 4 5 6 7 8

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