Datasheet > AP10P135M

AP10P135M

更新时间： 2024-11-02 17:15:15

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
6页	104K
描述
SO-8

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AP10P135M 数据手册

AP10P135M

Halogen-Free Product

Advanced Power

Electronics Corp.

P-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Low Gate Charge

BV_DSS

-100V

135mΩ

-3A

▼ Fast Switching Characteristic

▼ Simple Drive Requirement

R_DS(ON)

I_D

▼ RoHS Compliant & Halogen-Free

Description

AP10P135 series are from Advanced Power innovated design and

silicon process technology to achieve the lowest possible on-resistance

and fast switching performance. It provides the designer with an

extreme efficient device for use in a wide range of power applications.

SO-8

The SO-8 package is widely preferred for all commercial-industrial

surface mount applications and suited for low voltage applications such

as DC/DC converters.

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

-100

Gate-Source Voltage

+20

Drain Current, V_GS@ 10V³

Pulsed Drain Current¹

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

-3

-2.4

-20

P_D@T_A=25℃

E_AS

Total Power Dissipation³

2.5

℃

Single Pulse Avalanche Energy⁴

Storage Temperature Range

Operating Junction Temperature Range

12.5

T_STG

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

Unit

Rthj-a

Maximum Thermal Resistance, Junction-ambient³

℃/W

202301091

12 3 4 5 6

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