AP10TN010CMT
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Rg & UIS Test
BVDSS
RDS(ON)
ID
100V
10mΩ
49A
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▼ Simple Drive Requirement
▼ Lower On-resistance
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▼ RoHS Compliant & Halogen-Free
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Description
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AP10TN010C series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
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applications.
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®
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The PMPAK
5x6 package is special for DC-DC converters
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PMPAK® 5x6
application and the foot print is compatible with SO-8 with backside
heat sink and lower profile.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
.
Symbol
Parameter
Rating
Units
V
VDS
VGS
Drain-Source Voltage
100
Gate-Source Voltage
+20
V
Drain Current , VGS @ 10V
ID@TC=25℃
ID@TC=100℃
ID@TA=25℃
ID@TA=70℃
IDM
49
A
Drain Current , VGS @ 10V
31
A
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
17
A
13.6
160
A
A
PD@TC=25℃
PD@TA=25℃
EAS
Total Power Dissipation
Total Power Dissipation3
Single Pulse Avalanche Energy4
Storage Temperature Range
Operating Junction Temperature Range
41.6
5
W
W
mJ
℃
℃
54
TSTG
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
Parameter
Value
Unit
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient3
3
Rthj-a
25
Data and specifications subject to change without notice
1
201701031