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AP10TN135K PDF预览

AP10TN135K

更新时间: 2024-09-27 17:15:47
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
6页 75K
描述
SOT-223

AP10TN135K 数据手册

 浏览型号AP10TN135K的Datasheet PDF文件第2页浏览型号AP10TN135K的Datasheet PDF文件第3页浏览型号AP10TN135K的Datasheet PDF文件第4页浏览型号AP10TN135K的Datasheet PDF文件第5页浏览型号AP10TN135K的Datasheet PDF文件第6页 
AP10TN135K  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
Simple Drive Requirement  
BVDSS  
RDS(ON)  
ID  
100V  
135mΩ  
3A  
Lower Gate Charge  
Fast Switching Characteristic  
G
Halogen Free & RoHS Compliant Product  
Description  
D
AP10TN135 series are from Advanced Power innovated design  
and silicon process technology to achieve the lowest possible on-  
resistance and fast switching performance. It provides the designer  
with an extreme efficient device for use in a wide range of power  
applications.  
S
D
SOT-223  
G
The SOT-223 package is designed for suface mount application,  
larger heatsink than SO-8 and SOT package.  
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)  
.
Symbol  
Parameter  
Rating  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
100  
Gate-Source Voltage  
+20  
V
Drain Current3, VGS @ 10V  
Drain Current3, VGS @ 10V  
Pulsed Drain Current1  
ID@TA=25  
ID@TA=70℃  
IDM  
3
A
2.4  
A
12  
A
PD@TA=25℃  
TSTG  
Total Power Dissipation  
2.78  
W
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
45  
Units  
Rthj-a  
Maximum Thermal Resistance, Junction-ambient3  
/W  
Data and specifications subject to change without notice  
1
201503171