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AP10TN135M PDF预览

AP10TN135M

更新时间: 2024-11-19 17:15:27
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
6页 108K
描述
SO-8

AP10TN135M 数据手册

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AP10TN135M  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
Simple Drive Requirement  
BVDSS  
RDS(ON)  
ID  
100V  
135mΩ  
3A  
D
D
Fast Switching Characteristic  
Low Gate Charge  
D
D
G
S
RoHS Compliant & Halogen-Free  
S
S
SO-8  
Description  
D
S
AP10TN135 series are from Advanced Power innovated design  
and silicon process technology to achieve the lowest possible on-  
resistance and fast switching performance. It provides the  
designer with an extreme efficient device for use in a wide range  
of power applications.  
G
The SO-8 package is widely preferred for all commercial-  
industrial surface mount applications using infrared reflow  
technique and suited for voltage conversion or switch  
applications.  
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)  
.
Symbol  
Parameter  
Rating  
Units  
VDS  
VGS  
Drain-Source Voltage  
100  
V
Gate-Source Voltage  
+20  
V
Drain Current, VGS @ 10V3  
Drain Current, VGS @ 10V3  
Pulsed Drain Current1  
ID@TA=25  
ID@TA=70℃  
IDM  
3
A
2.2  
A
12  
A
PD@TA=25℃  
TSTG  
Total Power Dissipation  
2.5  
W
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
50  
Unit  
Rthj-a  
Maximum Thermal Resistance, Junction-ambient3  
/W  
Data and specifications subject to change without notice  
1
201503091