AP10TN135N
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
RDS(ON)
ID
100V
135mΩ
3A
D
▼ Fast Switching Characteristic
▼ Low Gate Charge
S
▼ RoHS Compliant & Halogen-Free
SOT-23
G
Description
D
S
AP10TN135 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide range
of power applications.
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The special design SOT-23 package with good thermal
performance is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and
suited for voltage conversion or switch applications.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
.
Symbol
Parameter
Rating
Units
VDS
VGS
Drain-Source Voltage
100
V
Gate-Source Voltage
+20
V
Drain Current, VGS @ 10V
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
ID@TC=25℃
ID@TA=25℃
ID@TA=70℃
IDM
3
A
2.1
A
1.7
A
10
A
PD@TA=25℃
TSTG
Total Power Dissipation
1.38
W
℃
℃
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
Parameter
Value
Unit
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient3
45
90
Rthj-a
Data and specifications subject to change without notice
1
201504202