5秒后页面跳转
AP10TN135N PDF预览

AP10TN135N

更新时间: 2024-11-02 17:15:47
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
6页 109K
描述
SOT-23

AP10TN135N 数据手册

 浏览型号AP10TN135N的Datasheet PDF文件第2页浏览型号AP10TN135N的Datasheet PDF文件第3页浏览型号AP10TN135N的Datasheet PDF文件第4页浏览型号AP10TN135N的Datasheet PDF文件第5页浏览型号AP10TN135N的Datasheet PDF文件第6页 
AP10TN135N  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
Simple Drive Requirement  
BVDSS  
RDS(ON)  
ID  
100V  
135mΩ  
3A  
D
Fast Switching Characteristic  
Low Gate Charge  
S
RoHS Compliant & Halogen-Free  
SOT-23  
G
Description  
D
S
AP10TN135 series are from Advanced Power innovated design  
and silicon process technology to achieve the lowest possible on-  
resistance and fast switching performance. It provides the  
designer with an extreme efficient device for use in a wide range  
of power applications.  
G
The special design SOT-23 package with good thermal  
performance is widely preferred for all commercial-industrial  
surface mount applications using infrared reflow technique and  
suited for voltage conversion or switch applications.  
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)  
.
Symbol  
Parameter  
Rating  
Units  
VDS  
VGS  
Drain-Source Voltage  
100  
V
Gate-Source Voltage  
+20  
V
Drain Current, VGS @ 10V  
Drain Current, VGS @ 10V3  
Drain Current, VGS @ 10V3  
Pulsed Drain Current1  
ID@TC=25  
ID@TA=25℃  
ID@TA=70℃  
IDM  
3
A
2.1  
A
1.7  
A
10  
A
PD@TA=25℃  
TSTG  
Total Power Dissipation  
1.38  
W
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
Unit  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient3  
45  
90  
Rthj-a  
Data and specifications subject to change without notice  
1
201504202