Datasheet > AP10TN030M

AP10TN030M

更新时间： 2024-09-27 17:15:15

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
6页	108K
描述
SO-8

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中文翻译

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技术参数
数据手册

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AP10TN030M 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.76	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

AP10TN030M 数据手册

AP10TN030M

Halogen-Free Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Simple Drive Requirement

BV_DSS

R_DS(ON)

I_D

100V

30mΩ

6.5A

▼ Low On-resistance

▼ Fast Switching Characteristic

▼ RoHS Compliant & Halogen-Free

SO-8

Description

AP10TN030 series are from Advanced Power innovated design and

silicon process technology to achieve the lowest possible on-resistance

and fast switching performance. It provides the designer with an

extreme efficient device for use in a wide range of power applications.

The SO-8 package is widely preferred for all commercial-industrial

surface mount applications using infrared reflow technique and suited

for voltage conversion or switch applications.

Absolute Maximum Ratings@T_j=25 C(unless otherwise specified)

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

100

Gate-Source Voltage

+20

Drain Current³, V_GS@ 10V

Pulsed Drain Current¹

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

6.5

P_D@T_A=25℃

T_STG

Total Power Dissipation

2.5

℃

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

Unit

Rthj-a

Maximum Thermal Resistance, Junction-ambient³

℃/W

Data and specifications subject to change without notice

201604082

12 3 4 5 6

中文翻译

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