5秒后页面跳转
AP10P135YT PDF预览

AP10P135YT

更新时间: 2024-11-18 17:15:39
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
6页 70K
描述
PMPAK-3x3

AP10P135YT 数据手册

 浏览型号AP10P135YT的Datasheet PDF文件第2页浏览型号AP10P135YT的Datasheet PDF文件第3页浏览型号AP10P135YT的Datasheet PDF文件第4页浏览型号AP10P135YT的Datasheet PDF文件第5页浏览型号AP10P135YT的Datasheet PDF文件第6页 
AP10P135YT  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
P-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
Simple Drive Requirement  
BVDSS  
-100V  
D
S
Small Size & Lower Profile  
RDS(ON)  
135mΩ  
RoHS Compliant & Halogen-Free  
G
D
D
Description  
D
D
AP10P135 series are from Advanced Power innovated design and silicon  
process technology to achieve the lowest possible on-resistance and fast  
switching performance. It provides the designer with an extreme efficient  
device for use in a wide range of power applications.  
S
The PMPAK® 3x3 package is special for voltage conversion application  
using standard infrared reflow technique with the backside heat sink to  
achieve the good thermal performance.  
S
S
G
PMPAK® 3x3  
o
.
Absolute Maximum Ratings@Tj=25 C(unless otherwise specified)  
Symbol  
Parameter  
Rating  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
-100  
Gate-Source Voltage  
+20  
V
Drain Current, VGS @ 10V  
Drain Current3, VGS @ 10V  
Drain Current3, VGS @ 10V  
Pulsed Drain Current1  
ID@TC=25  
ID@TA=25℃  
ID@TA=70℃  
IDM  
-9.5  
A
-3.4  
A
-2.7  
A
-13.6  
A
PD@TA=25℃  
EAS  
Total Power Dissipation  
3.13  
W
mJ  
Single Pulse Avalanche Energy4  
Storage Temperature Range  
Operating Junction Temperature Range  
12.5  
TSTG  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
Unit  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient3  
5
Rthj-a  
40  
1
201908301