Datasheet > AP10P135YT

AP10P135YT

更新时间： 2024-11-02 17:15:39

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
6页	70K
描述
PMPAK-3x3

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AP10P135YT 数据手册

AP10P135YT

Halogen-Free Product

Advanced Power

Electronics Corp.

P-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Simple Drive Requirement

BV_DSS

-100V

▼ Small Size & Lower Profile

R_DS(ON)

135mΩ

▼ RoHS Compliant & Halogen-Free

Description

AP10P135 series are from Advanced Power innovated design and silicon

process technology to achieve the lowest possible on-resistance and fast

switching performance. It provides the designer with an extreme efficient

device for use in a wide range of power applications.

The PMPAK^®3x3 package is special for voltage conversion application

using standard infrared reflow technique with the backside heat sink to

achieve the good thermal performance.

PMPAK^®3x3

Absolute Maximum Ratings@T_j=25 C(unless otherwise specified)

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

-100

Gate-Source Voltage

+20

Drain Current, V_GS@ 10V

Drain Current³, V_GS@ 10V

Pulsed Drain Current¹

I_D@T_C=25℃

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

-9.5

-3.4

-2.7

-13.6

P_D@T_A=25℃

E_AS

Total Power Dissipation

3.13

℃

Single Pulse Avalanche Energy⁴

Storage Temperature Range

Operating Junction Temperature Range

12.5

T_STG

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

Unit

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient³

Rthj-a

201908301

12 3 4 5 6

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