Datasheet > AP10P10GK-HF

AP10P10GK-HF

更新时间： 2024-11-01 12:26:39

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
4页	54K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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AP10P10GK-HF 数据手册

AP10P10GK-HF

Halogen-Free Product

Advanced Power

Electronics Corp.

P-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Simple Drive Requirement

BV_DSS

R_DS(ON)

I_D

-100V

500mΩ

- 1.65A

▼ Lower Gate Charge

▼ Fast Switching Characteristic

▼ RoHS Compliant & Halogen-Free

SOT-223

Description

AP10P10 series are from Advanced Power innovated design and silicon

process technology to achieve the lowest possible on-resistance and

fast switching performance. It provides the designer with an extreme

efficient device for use in a wide range of power applications.

The SOT-223 package is designed for suface mount application, larger

heatsink than SO-8 and SOT package.

Absolute Maximum Ratings

Symbol

Parameter

Rating

- 100

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

+20

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

Continuous Drain Current³

Pulsed Drain Current¹

- 1.65

-1.3

-6

P_D@T_A=25℃

T_STG

Total Power Dissipation

2.78

℃

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

Unit

Rthj-a

Maximum Thermal Resistance, Junction-ambient³

℃/W

Data and specifications subject to change without notice

201211021

12 3 4

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