Datasheet > AP10P10GH,J-HF

AP10P10GH,J-HF

更新时间： 2024-11-02 01:20:55

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
4页	107K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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AP10P10GH,J-HF 数据手册

AP10P10GH/J-HF

Halogen-Free Product

Advanced Power

Electronics Corp.

P-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Simple Drive Requirement

BV_DSS

R_DS(ON)

I_D

-100V

500mΩ

-5.7A

▼ Lower Gate Charge

▼ Fast Switching Characteristic

▼ RoHS Compliant & Halogen-Free

Description

Advanced Power MOSFETs from APEC provide the designer with the best

combination of fast switching, ruggedized device design, low on-resistance

and cost-effectiveness.

TO-252(H)

TO-251(J)

The TO-252 package is widely preferred for all commercial-industrial

surface mount applications and suited for low voltage applications such as

DC/DC converters. The through-hole version (AP10P10GJ) is available for

low-profile applications.

Absolute Maximum Ratings

Symbol

Parameter

Rating

-100

+30

-5.7

-3.6

-15

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current¹

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

P_D@T_C=25℃

P_D@T_A=25℃

T_STG

Total Power Dissipation

Total Power Dissipation³

32.5

℃

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

3.85

62.5

110

Units

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient (PCB mount)³

Maximum Thermal Resistance, Junction-ambient

Rthj-a

Data and specifications subject to change without notice

201110202

12 3 4

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