Datasheet > AP10NB4R2LH

AP10NB4R2LH

更新时间： 2024-09-16 17:15:39

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
8页	226K
描述
TO-252

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中文翻译

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AP10NB4R2LH 数据手册

AP10NB4R2LH

Halogen-Free Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ 100% R_g& UIS Test

BV_DSS

100V

▼ Simple Drive Requirement

R_DS(ON)

4.2mΩ

▼ Lower On-resistance

▼ RoHS Compliant & Halogen-Free

Description

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TO-252(H)

The TO-220 package is widely preferred for all commercial-

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connection resistance.

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

100

Gate-Source Voltage

+20

Drain Current, V_GS@ 10V⁶(Silicon Limited)

Drain Current, V_GS@ 10V⁶(Package Limited)

Drain Current, V_GS@ 10V

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

116.5

73.6

Pulsed Drain Current¹

450

P_D@T_C=25℃

P_D@T_A=25℃

E_AS

Total Power Dissipation

Total Power Dissipation³

Single Pulse Avalanche Energy⁴

Storage Temperature Range

Operating Junction Temperature Range

104

℃

200

T_STG

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

Units

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient³

1.2

Rthj-a

62.5

202209301

12 3 4 5 6 7 8

中文翻译

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