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AON6404A PDF预览

AON6404A

更新时间: 2024-09-14 12:51:27
品牌 Logo 应用领域
飞思卡尔 - FREESCALE /
页数 文件大小 规格书
6页 410K
描述
30V N-Channel MOSFET

AON6404A 数据手册

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AON6404A  
30V N-Channel MOSFET  
General Description  
The AON6404A combines advanced trench MOSFET  
technology with a low resistance package to provide  
extremely low RDS(ON)  
. This device is ideal for load switch  
and battery protection applications.  
Features  
VDS  
30V  
ID (at VGS=10V)  
RDS(ON) (at VGS=10V)  
RDS(ON) (at VGS=4.5V)  
85A  
< 2.3m  
< 3.0mΩ  
D
Top View  
1
8
2
3
7
6
G
4
5
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
Maximum  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
30  
±20  
85  
V
V
VGS  
TC=25°C  
Continuous Drain  
CurrentG  
Pulsed Drain Current C  
ID  
TC=100°C  
A
67  
IDM  
280  
25  
TA=25°C  
TA=70°C  
Continuous Drain  
Current  
Avalanche Current C  
Avalanche energy L=0.1mH C  
IDSM  
A
19  
IAS, IAR  
60  
A
EAS, EAR  
180  
83  
mJ  
TC=25°C  
PD  
W
Power Dissipation B  
TC=100°C  
33  
TA=25°C  
2.3  
PDSM  
W
°C  
Power Dissipation A  
1.4  
TA=70°C  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 150  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
14  
40  
1
Max  
17  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A D  
Maximum Junction-to-Case  
t
10s  
RθJA  
Steady-State  
Steady-State  
55  
RθJC  
1.5  
1/6  
www.freescale.net.cn  

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Power Field-Effect Transistor, 50A I(D), 30V, 0.0114ohm, 1-Element, N-Channel, Silicon, Me