Datasheet > AON6408L

AON6408L

更新时间： 2024-09-14 20:07:51

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	157K
描述
Transistor

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技术参数
数据手册

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AON6408L 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.8
Base Number Matches：	1

AON6408L 数据手册

AON6408

30V N-Channel MOSFET

General Description

Product Summary

The AON6408 combines advanced trench MOSFET

technology with a low resistance package to provide

extremely low R_DS(ON). This device is for PWM

applications.

_DS(V) = 30V

I_D= 25A

(V_GS= 10V)

(V_GS= 4.5V)

R_DS(ON)< 6.5mΩ

R_DS(ON)< 9.5mΩ

100% UIS Tested

100% Rg Tested

DFN5X6

Top View

Bottom View

PIN1

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

Gate-Source Voltage

Continuous Drain

Current ^G

V_GS

±20

T_C=25°C

I_D

T_C=100°C

Pulsed Drain Current ^C

I_DM

130

14.5

11.5

T_A=25°C

T_A=70°C

Continuous Drain

Current

Avalanche Current ^C

Repetitive avalanche energy L=0.1mH ^C

I_DSM

I_AR

E_AR

T_C=25°C

Power Dissipation ^B

T_C=100°C

P_D

12.5

2.4

T_A=25°C

P_DSM

°C

Power Dissipation ^A

1.5

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

Steady-State

R_θJC

3.4

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4 5 6

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