Datasheet > AON6407

AON6407

更新时间： 2024-09-14 12:51:27

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
6页	303K
描述
30V P-Channel MOSFET

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AON6407 数据手册

AON6407

30V P-Channel MOSFET

General Description

The AON6407 combines advanced trench MOSFET

technology with a low resistance package to provide

extremely low R

_DS(ON). This device is ideal for load switch and battery protection applications.

Features

V_DS

-30

I_D(at V_GS= -10V)

-85A

R_DS(ON)(at V_GS= -10V)

R_DS(ON)(at V_GS= -6V)

< 4.5mΩ

< 6.0mΩ

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

-30

Gate-Source Voltage

V_GS

±25

-85

T_C=25°C

Continuous Drain

Current ^G

Pulsed Drain Current ^C

I_D

T_C=100°C

-67

I_DM

-200

-32

T_A=25°C

T_A=70°C

Continuous Drain

Current

Avalanche Current ^C

Avalanche energy L=0.1mH ^C

I_DSM

-25.5

I_AS

E_AS

101

T_C=25°C

Power Dissipation ^B

T_C=100°C

P_D

T_A=25°C

7.3

P_DSM

°C

Power Dissipation ^A

4.7

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

≤ 10s

R_θJA

Steady-State

R_θJC

1.1

1.5

1/6

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