Datasheet > AON6424

AON6424

更新时间： 2024-09-14 12:51:39

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	395K
描述
30V N-Channel MOSFET

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AON6424 数据手册

AON6424

30V N-Channel MOSFET

General Description

Product Summary

V_DS

30V

The AON6424 uses advanced trench technology to

provide excellent R_DS(ON), low gate charge.This device is

suitable for use as a high side switch in SMPS and

general purpose applications.

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS= 4.5V)

41A

< 8.5mΩ

< 10mΩ

100% UIS Tested

100% R_gTested

DFN5X6

Top View

Bottom View

PIN1

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

±12

V_GS

T_C=25°C

Continuous Drain

Current

I_D

T_C=100°C

Pulsed Drain Current ^C

I_DM

T_A=25°C

T_A=70°C

Continuous Drain

Current

I_DSM

Avalanche Current ^C

I_AS, I_AR

Avalanche energy L=0.05mH ^C

E_AS, E_AR

T_C=25°C

Power Dissipation ^B

T_C=100°C

P_D

T_A=25°C

P_DSM

°C

Power Dissipation ^A

1.3

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

≤ 10s

R_θJA

Steady-State

R_θJC

3.5

Rev1 : Oct 2010

www.aosmd.com

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