Datasheet > AON6405L

AON6405L

更新时间： 2024-09-14 06:37:15

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
5页	129K
描述
P-Channel Enhancement Mode Field Effect Transistor

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技术参数
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AON6405L 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.57	Base Number Matches：	1

AON6405L 数据手册

AON6405L

P-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AON6405L combines advanced trench MOSFET

technology with a low resistance package to provide

extremely low R_DS(ON).This device is ideal for load

switch and battery protection applications.

V_DS(V) = -30V

I_D= -30A

(V_GS= -10V)

_DS(ON)< 7mΩ (V_GS= -10V)

_DS(ON)< 8mΩ (V_GS= -4.5V)

ESD Protected!

100% UIS Tested!

-RoHS Compliant

-Halogen Free

Top View

Fits SOIC8

footprint !

DFN5X6

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

-30

Units

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain

Current ^G

V_GS

±20

T_C=25°C

-30

T_C=100°C

I_D

-23

Pulsed Drain Current^C

I_DM

-160

-15

T_A=25°C

T_A=70°C

Continuous Drain

Current

Avalanche Current ^C

Repetitive avalanche energy L=0.1mH ^C

I_DSM

I_AR

-12

-54

E_AR

146

T_C=25°C

Power Dissipation ^B

T_C=100°C

P_D

T_A=25°C

2.5

P_DSM

Power Dissipation ^A

T_A=70°C

1.6

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics

Parameter

Symbol

Typ

14.2

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

1.5

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^AD

Maximum Junction-to-Case

Steady-State

R_θJC

1.2

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4 5

中文翻译

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