Datasheet > AO6802_11

AO6802_11

更新时间： 2024-10-30 12:24:35

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
5页	205K
描述
30V Dual N-Channel MOSFET

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AO6802_11 数据手册

AO6802

30V Dual N-Channel MOSFET

General Description

Product Summary

V_DS

The AO6802 uses advanced trench technology to

provide excellent R_DS(ON)and low gate charge. This

device is suitable for use as a load switch or in PWM

applications.

30V

I_D(at V_GS=10V)

3.5A

R_DS(ON)(at V_GS=10V)

< 50mΩ

< 70mΩ

R_DS(ON)(at V_GS= 4.5V)

TSOP6

Top View

Bottom View

Top View

Pin1

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

±20

V_GS

T_A=25°C

T_A=70°C

3.5

Continuous Drain

Current

I_D

Pulsed Drain Current ^C

I_DM

P_D

T_A=25°C

T_A=70°C

1.15

0.73

-55 to 150

°C

Power Dissipation ^B

Junction and Storage Temperature Range

T_J, T_STG

Thermal Characteristics

Parameter

Symbol

Typ

Max

110

150

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

≤ 10s

R_θJA

Steady-State

106

R_θJL

Rev 2: Mar 2011

www.aosmd.com

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