Datasheet > AO7402L

AO7402L

更新时间： 2024-09-13 08:31:03

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管
页数	文件大小	规格书
4页	108K
描述
N-Channel Enhancement Mode Field Effect Transistor

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AO7402L 数据手册

AO7402

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AO7402 uses advanced trench technology to provide

excellent R_DS(ON), low gate charge and operation with gate

voltages as low as 1.8V, in the small SOT323 footprint. It can

be used for a wide variety of applications, including load

switching, low current inverters and low current DC-DC

converters. Standard Product AO7402 is Pb-free (meets ROHS

& Sony 259 specifications). AO7402L is a Green Product

ordering option. AO7402 and AO7402L are electrically

identical.

V_DS(V) = 20V

I_D= 1.6 A (V_GS= 4.5V)

R_DS(ON)< 90mΩ (V_GS= 4.5V)

R_DS(ON)< 105mΩ (V_GS= 2.5V)

R_DS(ON)< 130mΩ (V_GS= 1.8V)

SC-70

(SOT-323)

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

V_GS

Gate-Source Voltage

Continuous Drain

Current ^A

±8

1.6

T_A=25°C

T_A=70°C

I_D

1.2

Pulsed Drain Current ^B

I_DM

T_A=25°C

T_A=70°C

0.35

P_D

Power Dissipation ^A

0.22

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Symbol

Typ

300

340

280

Max

360

425

320

Units

°C/W

t ≤ 10s

R_θJA

Steady-State

R_θJL

Alpha Omega Semiconductor, Ltd.

12 3 4

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