Datasheet > AO7401

AO7401

更新时间： 2024-10-15 18:09:51

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
5页	500K
描述
P-Channel MOSFET

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中文翻译

获取价格

数据手册

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AO7401 数据手册

SMD Type

MOSFET

Transistors

P-Channel MOSFET

AO7401 (KO7401)

■ Features

● VDS

-30V

● I

(at VGS=-10V)

-1.4A

● R^DS(ON)(at VGS =-10V)

● R^DS(ON)(at VGS =-4.5V)

● R^DS(ON)(at VGS =-2.5V)

< 115mΩ

< 140mΩ

< 200mΩ

1.Gate

2.Source

3.Drain

■ Absolute Maximum Ratings

= 25℃ unless otherwise noted.

Parameter

Symbol

Rating

Unit

Drain-Source Voltage

Gate-Source Voltage

VDS

-30

±12

-1.4

=25℃

=70℃

Continuous Drain Current

Pulsed Drain Current ^C

-1.0

-10

0.35

0.22

360

=25℃

=70℃

Power Dissipation

t ≤ 10s

Thermal Resistance.Junction- to-Ambient

Thermal Resistance.Junction- to-Lead

Junction Temperature

RθJA

A D

Steady-State

425

℃/W

RθJL

320

150

℃

Storage Temperature Range

stg

-55 to 150

A. The value of RθJA is measured with the device mounted on 1in²FR-4 board with 2oz. Copper, in a still air environment with

=25°C. The value in any given application depends on the user's specific board design.

B. The power dissipation P is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.

C. Repetitive rating, pulse width limited by junction temperature T^J(MAX)=150°C. Ratings are based on low frequency and

duty cycles to keep initial T =25°C.

D. The R^θJAis the sum of the thermal impedance from junction to lead RθJL and lead to ambient.

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